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Crystal Plasticity Analysis of Thermal Deformation and Dislocation Accumulation in Gaas/Si Patterned Structure

Published online by Cambridge University Press:  26 February 2011

Tetsuya Ohashi  and
Naoyuki Honda
Tetsuya Ohashi
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 4026, Kuji, Hitachi, 319-12, Japan
Naoyuki Honda
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd. 4026, Kuji, Hitachi, 319-12, Japan
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Abstract

Plastic slip deformation in patterned.GaAs films on Si substrate during cooling from film deposition temperature are numerically simulated under a continuum mechanics approximation. The plastic slip is assumed to take place on (111) <110> slip systems and activation condition of the slip systems is given by the Schmid's law. The critical resolved shear stresses for the activation of slip systems are expressed as a function of accumulated dislocation densities, which are evaluated by models for their movement and interaction. A three dimensional finite element computer program is developed, in which strain hardening behaviour is given a quantitative expression by the models for dislocations. Results of the simulation reveal process of plastic slip and dislocation accumulation in GaAs film. Residual stress evaluated by the simulation agreed well with results obtained by photo-luminescent experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 147
Copyright
Copyright © Materials Research Society 1991

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