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Crystal Growth of Bi2Sr2CaCu2Ox Superconductor by Zone Melting Technique

Published online by Cambridge University Press:  18 March 2011

T. Iwamoto ,
S. Watauchi  and
I. Tanaka
T. Iwamoto
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7, Kofu 400-8511, Japan
S. Watauchi
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7, Kofu 400-8511, Japan CREST Project, Japan Science and Technology Corporation, Japan
I. Tanaka
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7, Kofu 400-8511, Japan CREST Project, Japan Science and Technology Corporation, Japan
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Abstract

We attempted to grow single crystals of Bi2Sr2CaCu2Ox (Bi-2212) by Traveling Solvent Zone Melting (TSZM) technique using a gold crucible to stabilize the molten zone as well as to control the composition of Bi-2212 single crystals. As the results of crystal growth, chemical composition of the grown crystals was determined to be Bi: Sr: Ca: Cu = 1.97(4): 1.75(7): 0.88(3): 2.0, which was close to that of feeds. TSZM growth may be effective on the control of composition of Bi-2212 crystals. Superconducting properties of the grown crystal of Bi-2212 were TcTconset=85 K andΔTc=10 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 659: Symposium II – High-Temperature Superconductors-Crystal Chemistry, Processing & Properties , 2000 , II9.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Emmen, J.H.P.H., Lenczowski, S.K.J., Daalders, J.H.J and Brabers, V.A.M., J. Cryst. Growth 118 (1992) 477.Google Scholar
2. Shigematsu, K., Takei, H., Higashi, I., Hoshino, K., Takahara, H. and Aono, K., J.Cryst. Growth 100 (1990) 661.Google Scholar
3. Oka, K., Han, T.S, Ha, D.H., Iga, F. and Unoki, H., Physica C 215 (1993) 407.Google Scholar
4. Demianets, L.N, Bykov, A.B., Melnikov, O.K and Stishov, S.M., Bull. Mater. Sci. 14 (1991) 415.Google Scholar
5. Wang, Y., Bennema, P., Schreurs, L.W.M, Bentum, P.J.M van, Kempen, H.van, Leemput, L.E.C van de, Wnuk, J. and Linden, P.van der, J.Cryst. Growth 99 (1990) 933.Google Scholar
6. Guo, S.J., Easterling, K.E, Dou, S.X. and Liu, H.K., J.Cryst. Growth 100 (1990) 303.Google Scholar
7. Murashov, V.A., Gordeev, S.N., Dubenko, I.S, Bush, A.A., Matynkin, A.Yu., Trofimov, Yu.V. and Goncharov, I.N., European Workshop on HTSC Single Crystals: Growth and properties, Kharkov, USSR, October 14-20 (1991).Google Scholar
8. Babijchuk, I.P, Dolzhenkova, E.F., Kosmyna, M.B. and Nekrasov, V.V., J. Cryst. Growth 118 (1992) 529.Google Scholar
9. Tanaka, A., Kishida, S., Shibasaki, A., Hosokawa, E., Tokutaka, H., J. Cryst. Growth 182 (1997) 60–64.Google Scholar
10. Kishida, S., Nakamura, M., Ling, W.Y., J. Cryst. Growth 216 (2000) 220–224.Google Scholar
11. Campa, J.A, Gutierrez-Puebla, E., Monge, M.A., Rasines, I. and Ruiz-Valero, C., J. Cryst. Growth 125 (1992) 17.Google Scholar