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Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth

Published online by Cambridge University Press:  01 February 2011

Takeshi Tawara
Affiliation:
tawara-takeshi@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., Device Technology Lab., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Yuko Ueki
Affiliation:
ueki-yuko@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Shunichi Nakamura
Affiliation:
nakamura-shunichi@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Masahide Gotoh
Affiliation:
gotoh-masahide@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Yoshiyuki Yonezawa
Affiliation:
yonezawa-yoshiyuki@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Masaharu Nishiura
Affiliation:
nishiura-masaharu@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
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Abstract

The dependence of phosphorus doping on crystal face and C/Si ratio in the epitaxial growth of 4H-SiC using phosphine were investigated. Phosphorus incorporation was highest on off-axis (000-1) and lowest on off-axis (0001). Phosphorus incorporation on (11-20) came between that on off-axis (0001) and (000-1). With increasing C/Si ratio from 0.5 to 2.5, phosphorus incorporation increased on (11-20) and off-axis (000-1). Phosphorus incorporation on off-axis (0001) showed unclear C/Si ratio dependence. On (000-1), the highest phosphorus concentration of 2 × 1018cm-3 was obtained by an increasing PH3 flow rate. The roughness, growth rate, and surface morphology of the high phosphorus doped epilayer were investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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