Skip to main content Accessibility help
×
Home
Hostname: page-component-59b7f5684b-vcb8f Total loading time: 0.296 Render date: 2022-10-04T10:12:13.352Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "displayNetworkTab": true, "displayNetworkMapGraph": true, "useSa": true } hasContentIssue true

Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth

Published online by Cambridge University Press:  01 February 2011

Takeshi Tawara
Affiliation:
tawara-takeshi@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., Device Technology Lab., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Yuko Ueki
Affiliation:
ueki-yuko@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Shunichi Nakamura
Affiliation:
nakamura-shunichi@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Masahide Gotoh
Affiliation:
gotoh-masahide@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Yoshiyuki Yonezawa
Affiliation:
yonezawa-yoshiyuki@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Masaharu Nishiura
Affiliation:
nishiura-masaharu@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano, N/A, 3900821, Japan
Get access

Abstract

The dependence of phosphorus doping on crystal face and C/Si ratio in the epitaxial growth of 4H-SiC using phosphine were investigated. Phosphorus incorporation was highest on off-axis (000-1) and lowest on off-axis (0001). Phosphorus incorporation on (11-20) came between that on off-axis (0001) and (000-1). With increasing C/Si ratio from 0.5 to 2.5, phosphorus incorporation increased on (11-20) and off-axis (000-1). Phosphorus incorporation on off-axis (0001) showed unclear C/Si ratio dependence. On (000-1), the highest phosphorus concentration of 2 × 1018cm-3 was obtained by an increasing PH3 flow rate. The roughness, growth rate, and surface morphology of the high phosphorus doped epilayer were investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Laube, M., Schmid, F., Pensl, G., Wagner, G., Linnarsson, M., Maier, M., J. Appl. Phys. 92 (2002) pp. 549.CrossRefGoogle Scholar
[2] Senzaki, J., Fukuda, K., and Arai, K., J. Appl. Phys. 94 (2003) pp. 2942.CrossRefGoogle Scholar
[3] Wang, R., Bhat, I.B., and Chow, T.P., J. Appl. Phys. 92 (2002) pp. 7587.CrossRefGoogle Scholar
[4] Henry, A., Janzen, E., Mat. Sci. Forum 483–485 (2005) pp. 101.CrossRefGoogle Scholar
[5] Larkin, D. J., phys. stat. sol. (b) 202 (1997) pp. 305.3.0.CO;2-9>CrossRefGoogle Scholar
[6] Yamamoto, T., Kimoto, T. and Matsumani, H., Mat. Sci. Forum 264–268 (1998) pp. 111.CrossRefGoogle Scholar
[7] Okojie, R., Xhang, M., Pirouz, P., Tumakha, S., Jessen, G., and Brillson, L., Mat. Sci. Forum 389–393 (2002) pp. 451.Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *