Creation of In-Plane Anisotropic Strain in GaAs/A1xGa1−xAs Multiple Quantum Well Structures
Published online by Cambridge University Press: 22 February 2011
Thin film of GaAs/AlGaAs multiple quantum well (MQW) structure have been bonded to the lithium tantalate (LiTaO3) or calcium carbonate (CaCO3) substrates cut such that one of the linear thermal expansion coefficients almost matches that of the MQW while its orthogonal counterpart does not. By choosing the proper bonding and operating temperatures, in-plane anisotropic strain up to 0.3% has been achieved. The transmission spectrum shows an anisotropy in excitonic absorption which results in a polarization rotation of a light beam at normal incidence to the structure. The theoretical calculation is in agreement with the experimental results. Using the polarization rotation, we have demonstrated a novel MQW light modulator with an exceedingly high contrast ratio of 330:1.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 537
- Copyright © Materials Research Society 1993