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Correlations between higher-order rings and microvoids in hydrogenated amorphous silicon

Published online by Cambridge University Press:  04 February 2015

Parthapratim Biswas
Department of Physics and Astronomy, The University of Southern Mississippi, Hattiesburg, MS 39406, U.S.A. Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
David Alan Drabold
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
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In this paper we report the structure of voids in several thousand atom models of hydrogenated amorphous silicon. The models are produced by jointly employing experimental information from Smets and coworkers [1] and first principles simulations [2]. We demonstrate the existence of a useful correlation between the presence of large irreducible rings and the voids in hydrogenated amorphous silicon networks. Molecular hydrogen is observed in the models, and discussed.

Copyright © Materials Research Society 2015 

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