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Correlation Between Resistivity and Yellow Luminescence Intensity of MOCVD-Grown GaN Layers

Published online by Cambridge University Press:  01 February 2011

Akihiro Hinoki
Affiliation:
ro006990@se.ritsumei.ac.jp, Ritsumeikan University, Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga, 525-8577, Japan, +81-77-561-2884, +81-77-561-3994
Yuichi Hiroyama
Affiliation:
hiroyama@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center,, Japan
Tadayoshi Tsuchiya
Affiliation:
tsuchiya@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center, Japan
Tomoyuki Yamada
Affiliation:
yamada@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center, Japan
Masayuki Iwami
Affiliation:
iwami@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center
Katsuhiro Imada
Affiliation:
imada@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center, Japan
Junjiroh Kikawa
Affiliation:
kikawa@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center, Japan
Tsutomu Araki
Affiliation:
tara@se.ritsumei.ac.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center
Akira Suzuki
Affiliation:
a-suzuki@se.ritsumei.ac.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center, Japan
Yasushi Nanishi
Affiliation:
nanishi@se.ritsumei.ac.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center
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Abstract

For further improvements in AlGaN/GaN heterojunction field-effect transistor performance (HFET), it is necessary to reduce the leakage current of the GaN buffer layer. We found a correlation between the leakage current and the intensity of the yellow luminescence of GaN layers taken by UV lamp excitation. The GaN layers were grown by metal organic chemical vapor deposition on SiC substrates. When the samples were excited by a UV (365 nm) lamp, visible yellow luminescence was observed. The leakage current of the GaN buffer layer was measured after deposition of ohmic metal contact. We confirmed clear correlation between the leakage current and the luminescence intensity based from result that the samples with the larger leakage current showed the stronger luminescence intensity. This correlation gives us useful information to understand the drain-source leakage current of AlGaN/GaN HFET.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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