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Correlation Among Process Routes, Microstructures and Properties of Chemically Vapor Deposited Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

Robert F. Davis
Robert F. Davis*
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695
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Abstract

“Silicon carbide” is a generic term for a host of different materials produced by several process routes which yield a variety of microstructures and associated property characteristics. The route of chemical vapor deposition (CVD) is used primarily to deposit SiC for wear- and corrosion- resistant coatings and for diffusion barriers to and from the underlying substrate. Presently this technique is also being used to deposit monocrystalline semiconductor thin films of SiC and to infiltrate various high temperature woven fabrics with this material. The following sections describe the results of thermodynamic calculations to define SiC CVD diagrams using various precursor gas mixtures, discuss various CVD techniques and detail the results of deformation, infiltration and thin film deposition studies that have been recently conducted on vapor deposited SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 145
Copyright
Copyright © Materials Research Society 1990

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