Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-24T00:15:49.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Conduction and Threshold Switching in Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

A. Sa-Neto
A. Sa-Neto*
Affiliation:
Instituto Venezolano de Investigaciones Cientificas, Apartado 1827, Caracas 1010-A, Venezuela.
Get access

Abstract

We report on measurements of conduction, threshold switching and high frecuency oscillations (∼100 MHZ) on amorphous silicon prgduced by RF sputtering in lateral devices with a very small (4µm2 to 40µm2 ) metalic contact area. The results show that the mechanism of threshold switching in this material is not due to the formation of a metalic filament through diffusion of the contacts. A small amount of Hydrogen (PH2/PAr=0.025) is sufficient to inhibit threshold switching. The “Zero voltage” resistance is reproducible and seems to be independent of the switching events.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 389
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Adler, D., Henischand, H.K. Mott, N.,Rev.Mod. Phys. 50,209 (1978)CrossRefGoogle Scholar
2. Dearwaley, G., Stonneram, A.M., and Morgan, D.V., Rep. Prog. Phys. 33,1129 (1970).CrossRefGoogle Scholar
3. Henisch, H.K. and Smith, W.R., Appl. Phys. Lett. 24, 589 (1974).Google Scholar
4. Henisch, H.K., Meyers, J.A., Callarotti, R.C., and Schmidt, P.E., Thin Solid Films 51, 265 (1978).CrossRefGoogle Scholar
5. Schmidt, P.E., Mena, J.G., and Callarotti, R., Thin Solid Films 55,9 (1978).CrossRefGoogle Scholar
6. Mehendru, P.E., Pathak, N.L., Singh, Satbir, and Phys, Mchendru. Status Solidi (A) 38, 355 (1976).Google Scholar
7. Wollman, W. and Poll, H.U., Thin Solid Films 26,201 (1975).Google Scholar
8. Chutia, J. and Barua, K., Thin Solid Films 55, 387–390 (1978).Google Scholar
9. Sa-Neto, A., Octavio, M., Callarotti, R., Schniidt, P. and Esqueda, P., J. Appl.Phys. 51(7),July 1980.CrossRefGoogle Scholar
10. Adler, D., “Amorphous Semidonductors” (CRC press 1971).Google Scholar
11. Krell, D.M. and Cohen, M.H., J.Non-Cryst. Solids 8–10,544 (1972).CrossRefGoogle Scholar
12.An other possible mechanism of breakdown was proposed by the referee. He suggested that the observed effects could be indicative of the breackdown of a contact resistance having a resistivity of 107 Q cm as compared to the ohmic resjstance of unhydrogenated a-Si which is typically on the order of 10 f2cm.Google Scholar