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Computational Experiment on CVD of SiC: Growth Rate, C/Si Ratio, Parasitic Phase Formation

Published online by Cambridge University Press:  10 February 2011

Andrei N. Vorob'ev
Affiliation:
State University of Fine Mechanics and Optics, Computer Technology Dept., St.Petersburg 196117, Russia
Alexandre E. Komissarov
Affiliation:
State University of Fine Mechanics and Optics, Computer Technology Dept., St.Petersburg 196117, Russia
Maxim V. Bogdanov
Affiliation:
State University of Fine Mechanics and Optics, Computer Technology Dept., St.Petersburg 196117, Russia
Sergey Yu. Karpov
Affiliation:
Soft-Impact Ltd, St.Petersburg, Russia, karpov@softimpact.fi.ru
Olga V. Bord
Affiliation:
Soft-Impact Ltd, St.Petersburg, Russia, karpov@softimpact.fi.ru
Alexandre I. Zhmakin
Affiliation:
A.F.Ioffe Physical-Technical Institute, St.Petersburg 194021, Russia
Andrei A. Lovtsus
Affiliation:
State Technical University, St.Petersburg, Russia
Yuri N. Makarov
Affiliation:
Univ. Erlangen-Ntirnberg, Fluid Mechanics Dept., Erlangen, Germany
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Abstract

The heat and mass transport model extended to describe silicon cluster formation in the gas phase is employed for a numerical analysis of SiC CVD in a commercial vertical rotating disc reactor. The growth rate is studied as a function of precursor flow rates varied in a wide range of values. It is found that the growth rate is limited by the gas mixture depletion in silicon atoms due to homogeneous nucleation. The secondary phase formation on the growing surface is analyzed. The SiC growth window depending on the precursor flow rates is calculated, and a significant effect of the homogeneous nucleation on the window width is found. The model predicts that the Si/C ratio on the wafer can considerably differ from that at the reactor inlet.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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