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Composition and Structure of Si3n4 Implanted with Ti AT 900°C

Published online by Cambridge University Press:  26 February 2011

I. L. Singer ,
R. G. Vardiman  and
C. R. Gossett
I. L. Singer
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
R. G. Vardiman
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
C. R. Gossett
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
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Abstract

Ti+ ions were implanted to high fluences (up to 5 × 1017 /cm2 ) into Si3N4 substrates heated to around 900°C. Composition vs depth profiles were obtained by RBS (in conjunction with RUMP analysis) and microstructures were examined by TEM. At a fluence of 4 × 1017 /cm2, the Si concentration was considerably reduced at the Ti peak depth but enriched near the surface. By 5 × 1017 /cm2, Si was nearly depleted from the implanted layer, leaving a Ti-rich nitride layer merging continuously into Si3N4. TEN detected TiN precipitates up to several pm in diameter, and coherent with Si3N4 crystallites. A Si-Ti-N ternary phase diagram is used to interpret the observed solid state reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 201
Copyright
Copyright © Materials Research Society 1988

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References

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