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Complete Fabrication of Bipolar Devices in Silicon

Published online by Cambridge University Press:  21 February 2011

M. L. Lloyd  and
K. G. Ibbs
M. L. Lloyd
Affiliation:
Gec Research Laboratories, Hirst Research Centre, Wembley, UK
K. G. Ibbs
Affiliation:
Gec Research Laboratories, Hirst Research Centre, Wembley, UK
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Abstract

UV laser photochemical doping offers the possibility of direct fabrication of semiconductor devices by high-intensity photolithographic projection. We have recently demonstrated control of parameters such as dopant concentration and junction depth to the extent that npn structures can be readily produced.

Recent work also indicates that contact resistance can be dramatically reduced from the levels found using simple probes, by the low-temperature laser deposition of metals, and that this technique also can be used to connect elements in a circuit.

In this paper the progress made towards the fabrication of complete planar devices is described and the I-V characteristics of some simple diodes are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 35
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. McWilliams, B. M., Herman, I. P., Hyder, R. A., Mitlitsky, F., and Wood, L. L., CLEO 83, 230, (1983).Google Scholar
2. Ibbs, K. G. and Lloyd, M. L., Opt. Laser Tech. 15, 35–9, (1983).Google Scholar
3. Ibbs, K. G. and Lloyd, M. L., Opt. Laser Tech., to be published.Google Scholar
4. Sze, S. M., Physics of Semiconductor Devices, 101, (John Wiley and Sons, 1981).Google Scholar