Hostname: page-component-84b7d79bbc-4hvwz Total loading time: 0 Render date: 2024-07-29T05:01:03.389Z Has data issue: false hasContentIssue false

Combining Molecular Dynamics and Monte Carlo Simulations to Model Chemical Vapor Deposition: Application to Diamond

Published online by Cambridge University Press:  26 February 2011

D.W. Brenner
Affiliation:
Code 6179, Naval Research Laboratory, Washington, DC. 20375-5000
D.H. Robertson
Affiliation:
Code 6179, Naval Research Laboratory, Washington, DC. 20375-5000
R.J. Carty
Affiliation:
Department of Chemistry, Pennsylvania State University, University Park, PA 16802
D. Srivastava
Affiliation:
Department of Chemistry, Pennsylvania State University, University Park, PA 16802
B.J. Garrison
Affiliation:
Department of Chemistry, Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Gas-surface reactions of the type that contribute to growth during the chemical vapor deposition (CVD) of diamond films are generally completed in picoseconds, well within timescales accessible by molecular dynamics (MD) simulations. For low-pressure deposition, however, the time between collisions for a surface site can be microseconds, which makes direct modeling of CVD crystal growth impossible using standard MD methods. To effectively bridge this discrepancy in timescales, the gas-surface reactions can be modeled using MD trajectories, and then this data can be used to define probabilities in a Monte Carlo algorithm where each step represents a gas-surface collision. We illustrate this approach using the reaction of atomic hydrogen with a diamond (111) surface as an example, where we use abstraction and sticking probabilities generated using classical trajectories in a simple Monte Carlo algorithm to determine the number of open sites as a function of temperature. We also include models for the thermal desorption of hydrogen that predict that growth temperatures are not restricted by the thermal loss of chemisorbed hydrogen.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Angus, J.C. and Hayman, C.C., Science 241, 913 (1988); F.G. Celii and J.E. Butler, Annu. Rev. Phys. Chem. 42, 643 (1991).CrossRefGoogle Scholar
[2] Hamza, A.V., Kubiak, G.D. and Stulen, R.H., Surf. Science Lett. 206, L833 (1988).Google Scholar
[3] Pate, B.B., Surf. Science 165, 83 (1986).CrossRefGoogle Scholar
[4] Snail, K.A. and Hanssen, L.M., J. Cryst. Growth 112, 651 (1991).Google Scholar
[5] Berendsen, H.J.C., Postma, J.P.M., Gunsteren, W.F. van, DiNola, A. and Haak, J.R., J. Chem. Phys. 81, 3684 (1984).Google Scholar
[6] Gear, C.W., Numerical Initial Value Problems in Ordinaryj Differential Equations, (Prentice-Hall, Englewood Cliffs, 1971).Google Scholar
[7] Brenner, D.W., Phys. Rev. B 42, 9458 (1990).Google Scholar
[8] Westbrook, C.K., Warnatz, J., Pitz, W.J. Twenty Second Symposium (International) on Combustion, The Combustion Institute, 1988, p.893.Google Scholar
[9] Page, M. and Brenner, D.W., J. Am. Chem. Soc. 113, 3271 (1991).Google Scholar
[10] Frenklach, M., Phys. Rev. B, in press.Google Scholar
[11] Canavos, G.C., Applied Probability and Statistical Mlethods, (Little, Brown and Company, Boston, 1984) p. 84.Google Scholar
[12] Schulberg, M. (private communication). We also tried other related rates and secondorder desorption with little change in the results.Google Scholar
[13] Sato, Y., Proceedings of the First International Conference on New Diamond Science and Technology, p. 4.Google Scholar