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Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si

Published online by Cambridge University Press:  21 February 2011

Z. C. Feng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
C. C. Tin
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
K. T. Yue
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322, USA
R. Hu
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
J. Williams
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36849–5311, USA
S. C. Liew
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
Y. G. Foo
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
S. K. L. Choo
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
W. E. Ng
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
S. H. Tang
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore
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Abstract

A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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