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Cobalt Silicide OHMIC Contacts to 6H-SiC

Published online by Cambridge University Press:  21 February 2011

Nils Lundberg  and
M. Östling
Nils Lundberg
Affiliation:
Royal Institute of Technology, Department of Solid State Electronics, E229, S-164 40 Kista-Stockholm, Sweden
M. Östling
Affiliation:
Royal Institute of Technology, Department of Solid State Electronics, E229, S-164 40 Kista-Stockholm, Sweden
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Abstract

Materials and electrical evaluation were performed to determine the characteristics of ohmic contacts to 6H-SiC. Both elemental metal (Co) and suicides (CoSi and CoSi2) were studied following heat treatments at 500 °C and 900 °C for 5 hours and 2 hours, respectively. Materials analysis by Rutherford Backscattering Spectrometry (RBS) and X-ray Diffraction (XRD) monitored the temperature stability of the contacts after the annealings. Current density-voltage measurements at elevated temperatures established the specific contact resistance pc.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 229
Copyright
Copyright © Materials Research Society 1994

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References

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