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The Chemical Vapor Deposition of Zirconium Carbide onto Ceramic Substrates

Published online by Cambridge University Press:  10 February 2011

John A. Glass Jr. ,
Nick Palmisiano Jr.  and
R. Edward Welsh
John A. Glass Jr.
Affiliation:
Bettis Atomic Power Laboratory, PO Box 79, West Mifflin PA 15122
Nick Palmisiano Jr.
Affiliation:
Bettis Atomic Power Laboratory, PO Box 79, West Mifflin PA 15122
R. Edward Welsh
Affiliation:
Bettis Atomic Power Laboratory, PO Box 79, West Mifflin PA 15122
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Abstract

Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system. Laminar and equiaxial microcrystalline morphologies were obtained for superstoichiometric and substoichiometric zirconium carbide; respectively, allowing cursory metallographic identification of composition. Observed reductions in film density associated with zirconium carbide films that contain additional free carbon or excess zirconium are reported. These changes in film density were found to be consistent with compositional changes. An apparently linear relationship (correlation of 0.99) between methane flow in this chemical vapor deposition system and zirconium carbide stoichiometry in the substoichiometric range deposited above ZrC0.61 has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 185
Copyright
Copyright © Materials Research Society 1999

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