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Chemical Solution Based MoS2 Thin Film Deposition Based on Dimensional Reduction

Published online by Cambridge University Press:  23 September 2014

Changqing Pan ,
Zhongwei Gao  and
Chih-hung Chang
Changqing Pan
Affiliation:
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 97331, U.S.A. Oregon Process Innovation Center, Corvallis, OR 97330, U.S.A.
Zhongwei Gao
Affiliation:
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 97331, U.S.A.
Chih-hung Chang
Affiliation:
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 97331, U.S.A. Oregon Process Innovation Center, Corvallis, OR 97330, U.S.A.
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Abstract

As a promising transition metal dichalcogenide (TMDC), molybdenum disulfide (MoS2) has recently attracted a lot of attention due to its graphene-liked two dimensional layer structure, which leads to potential applications in electronic and optoelectronic devices. However, the fabrication of mono- or few-layer MoS2 is limited to ether liquid exfoliation or CVD, and the chemical solution deposition is limited to ammonium thiomolybdate-based precursor. In this paper, hydrazine-based dimensional reduction technique is applied in the chemical solution deposition of MoS2 thin-film, and a larger area uniform thin-film is obtained from bulk powder MoS2. This solution-based process could be applied with a variety coating techniques and lead to wafer level MoS2 thin film production.

Keywords

MoSsolution deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials—Thin Films and Nanostructures , 2014 , pp. 215 - 218
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Geim, A.K., Science 324, 1530 (2009).CrossRefGoogle Scholar
Mayorov, A.S., et al. ., Nano Lett. 11, 2396 (2011).CrossRefGoogle Scholar
Radisavljevic, B., et al. ., Nat.Nanotechnol. 6, 147 (2011).CrossRefGoogle Scholar
Wang, Q.H., et al. ., Nat. Nanotechnol. 7, 699 (2012).CrossRefGoogle Scholar
Coleman, J.N. et al. ., Science 331, 568 (2011).CrossRefGoogle Scholar
Lee, Y.-H., et al. ., Adv. Mater. 24, 2320 (2012).CrossRefGoogle Scholar
Liu, K.-K., et al. ., Nano Lett. 12, 1538 (2012).CrossRefGoogle Scholar
Mitzi, D.B., Adv. Mater 21, 3141 (2009).CrossRefGoogle Scholar
Mitzi, D.B., et al. ., Nature 428, 299 (2004).CrossRefGoogle Scholar
Wang, W., et al. ., Adv. Energy Mater. doi: 10.1002/aenm.201301465 CrossRefGoogle Scholar
Li, H., et al. ., Adv. Funct. Mater. 22, 1385 (2012).CrossRefGoogle Scholar