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Charging Model of a Si Nanocrystal-based Floating Gate in a Quantum Flash Memory

Published online by Cambridge University Press:  01 February 2011

Bertrand Leriche
Affiliation:
bertrand.leriche@iness.u-strasbg.fr, ENSPS, InESS Bd Sébastien Brant, BP 10413, ILLKIRCH F67412, France
Yann Leroy
Affiliation:
yann.leroy@ensps.u-strasbg.fr, ENSPS, InESS, Bd Sébastien Brant, BP 10413, ILLKIRCH, F67412, France
Anne-Sophie Cordan
Affiliation:
anne-sophie.cordan@ensps.u-strasbg.fr, ENSPS, InESS, Bd Sébastien Brant, BP 10413, ILLKIRCH, F67412, France
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Abstract

We propose a theoretical study for charging the floating gate composed of Si nanocrystals (NCs), in a non-volatile flash memory. Only a few electrons tunnel from the channel of a metal-oxide-semiconductor transistor into the two-dimensional array of nanocrystals.

Our model is based on the geometrical and physical properties of the device, in order to take the dispersion of the relevant parameters into account: NC radii, inter-NC distances, tunnel oxide and gate oxide thicknesses. The energy subbands of the channel are explicitly included, together with the doping density.

This three-dimensional model of electron tunneling into a NC is numerically solved through a two-dimensional finite element approach, which allows extensive numerical experimentations.

The tunneling times to charge a single NC or the whole NC floating gate are evaluated in a finer detail, and the influence of the dispersion of the relevant parameters is discussed.

Such a study may help the experimentalists to build efficient quantum flash memories.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1. Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996).CrossRefGoogle Scholar
2. Molas, G., Salvo, B. D., Mariolle, D., Ghibaudo, G., Toffoli, A., Buffet, N., and Deleonibus, S., Solid-State Electron. 47, 1645 (2003).CrossRefGoogle Scholar
3. Decossas, S., Mazen, F., Baron, T., Bremond, G., and Souifi, A., Nanotechnology 14, 1272 (2003).CrossRefGoogle Scholar
4. Bonafos, C. et al. , J. Appl. Phys. 95, 5696 (2004).CrossRefGoogle Scholar
5. Shalchian, M., Grisolia, J., Assayag, G. B., Coffin, H., Atarodi, S. M., and Claverie, A., Appl. Phys. Lett. 86, 163111 (2005).CrossRefGoogle Scholar
6. Compagnoni, C. M., Gusmeroli, R., Ielmini, D., Spinelli, A. S., and Lacaita, L., J. Nanosci. Nanotechnol. 7, 193205 (2007).Google Scholar
7. Iannaccone, G. and Coli, P., Appl. Phys. Lett. 78, 2046 (2001).CrossRefGoogle Scholar
8. Thean, A. and Leburton, J. P., IEEE Electron Device Lett. 22, 148 (2001).CrossRefGoogle Scholar
9. Sousa, J. S. de, Thean, A. V., Leburton, J. P., and Freire, V. N., J. Appl. Phys. 92, 6182 (2002).CrossRefGoogle Scholar
10. Clerc, R., Ghibaudo, G., and Pananakakis, G., in Proceedings of the 33rd Conference on European Solid-State Device Research, (ESSDERC '03, 2003) pp. 461464.Google Scholar
11. Cordan, A. S., Leroy, Y., and Leriche, B., Solid-State Electron. 50, 205 (2006).CrossRefGoogle Scholar
12. Leriche, B., Leroy, Y., and Cordan, A.-S., J. Appl. Phys. 100, 074316 (2006).CrossRefGoogle Scholar
13. Leroy, Y., Leriche, B., and Cordan, A.-S., in Proceedings of COMSOL Multiphysics Conference 2005, (COMSOL, Paris, 2005) pp. 129134.Google Scholar

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