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Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments

Published online by Cambridge University Press:  28 February 2011

A. Werner ,
A. M. Agarwal ,
T. D. Moustakas  and
M. Kunst
A. Werner
Affiliation:
Boston University, College of Engineering, Boston, MA 02215, USA
A. M. Agarwal
Affiliation:
Boston University, College of Engineering, Boston, MA 02215, USA
T. D. Moustakas
Affiliation:
Boston University, College of Engineering, Boston, MA 02215, USA
M. Kunst
Affiliation:
Hahn-Meitner-Institut, D-1000 Berlin 39, W., Germany
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Abstract

AlxGa1-xAs films, doped with silicon in the 1 x 1018 cm-3 range, have been prepared in the composition range x = 0.20 - 0.46 by molecular beam epitaxy. The influence of defect states on excess carrier trapping and recombination processes is studied by a contactless transient photoconductivity technique in the microwave region. Effective electron life- times in the 1 x 10-5s range for the 20% Al film down to the 1 x 10-7s range for the 46% Al film were found, indicating a larger density of electron traps in more Al rich films. The decay kinetics in AlGaAs is compared with the decay kinetics in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 481
Copyright
Copyright © Materials Research Society 1989

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