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Charge Carrier Absorption in Doped Microcrystalline Silicon Films

Published online by Cambridge University Press:  15 February 2011

M. Heintze
Affiliation:
IPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
E. Lotter
Affiliation:
Center for Solar Energy and Hydrogen Research Baden-Wuerttemberg, Heβbruehlstraβe 21c, 70569 Stuttgart, Germany
C.-D. Abel
Affiliation:
IPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
M. B. Schubert
Affiliation:
IPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

The infrared absorption in doped microcrystalline silicon thin films is analyzed by modelling the complex permittivity as the sum of the contributions resulting from interband transitions and from absorption by charge carriers. Their density and the drift mobility within grains is described by free carrier motion according to the Drude theory. However, for a good fit to experimental data a small trapping energy, reflecting the effect of grain boundaries, is included in the model. By comparing results obtained from the analysis of infrared data with conductivity and Hall measurements in films grown in a very high frequency (VHF) plasma and by hot-wire chemical vapor deposition (CVD), we show that infrared transmission measurements provide a simple access to transport parameters in these films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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