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Characterization of TiN Films Prepared by ion Beam Assisted Deposition

Published online by Cambridge University Press:  28 February 2011

Albert L. Chang  and
R. A. Kant
Albert L. Chang
Affiliation:
Westinghouse Electric Corp., P. O. Box 185, Boston, MA 02258
R. A. Kant
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

One of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 140: Symposium S – New Materials Approaches to Tribology: Theory and Applications , 1988 , 201
Copyright
Copyright © Materials Research Society 1989

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References

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