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Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

Published online by Cambridge University Press:  25 February 2011

F. Cembali
Affiliation:
CNR - Istituto LAMEL, 40126 Bologna (Italy)
A. M. Mazzone
Affiliation:
CNR - Istituto LAMEL, 40126 Bologna (Italy)
M. Servidori
Affiliation:
CNR - Istituto LAMEL, 40126 Bologna (Italy)
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Extract

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

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Articles
Copyright
Copyright © Materials Research Society 1986

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References

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Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation
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