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Characterization of MOS Devices Fabricated on Carbon Implanted Silicon Substrates

Published online by Cambridge University Press:  26 February 2011

Ibrahim Ban
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, P.O. Box 7911, Raleigh, NC 27695–7911, USA
Mehmet C. Öztürk
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, P.O. Box 7911, Raleigh, NC 27695–7911, USA
Kim Christensen
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, P.O. Box 7907, Raleigh, NC 27695–7907, USA
Dennis M. Maher
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, P.O. Box 7907, Raleigh, NC 27695–7907, USA
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Abstract

In this study, we present characterization of Metal-Oxide-Semiconductor (MOS) capacitors fabricated on carbon (C14) implanted silicon substrates. Carbon was implanted at an energy of 50 keV with doses ranging from 1 × 1012 cm−2 to 4.1×1015 cm−2. Metal-Oxide-Silicon (MOS) capacitors were fabricated and used to determine the MOS capacitance-voltage (C-V) and capacitance-time (C-t) behavior. These measurements revealed a strong correlation between carrier lifetime and the carbon dose. Degradation in lifetime was observed for carbon dose levels as low as 4 × l012 cm−2. At carbon doses equal to and above 6.4 × l013 cm−2, extremely low generation lifetimes were obtained (∼ 10−7 sec). On the other hand, degradation in C-V characteristics was observed only for carbon doses above 2.7 × l014 cm−2. Below this dose, both flatband voltage and interface trap density of the carbon implanted samples were comparable to those of the monitors. Analysis of the samples by cross sectional transmission electron microscopy revealed the absence of extended defects even in samples with high carbon dose levels.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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