Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T05:06:08.228Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization Of Micropipes And Other Defect Structures In 6H-SiC Through Fluorescence Microscopy

Published online by Cambridge University Press:  15 February 2011

W. D. Vetter ,
M. Dudley ,
T.- F. Wong  and
J. T. Frderich
W. D. Vetter
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275
T.- F. Wong
Affiliation:
Dept. of Earth & Space Sciences, SUNY at Stony Brook, NY 11794–2100
J. T. Frderich
Affiliation:
Geomechanics Dept. Sandia National Laboratories, Albuquerque, NM 87185–0751
Get access

Abstract

Crystals of silicon carbide, and other polytypic materials often have micropipes associated with screw dislocations of large Burgers vectors running along their axial dimensions. These defects are considered the most deleterious to the performance of SiC semiconductor devices.

Optical micrographs of micropipes in silicon carbide crystals are ordinarily faint. To obtain micrographs showing higher contrast and detail, laser scanning confocal microscopy (LSCM) and simple fluorescence microscopy were used on 6H-SiC single crystals after infiltrating them with a low-viscosity epoxy containing a fluorescent dye. “Staining” the micropipes rendered them much more visible both in fluorescence and conventional optical microscopies. Details of their structures and shapes were revealed, and their dimensions were measured accurately, using LSCM and other, less sophisticated, fluorescence microscopies. Other voids present, such as microcracks, were also visualized. Observations by this optical technique were related to information obtained by synchrotron white beam x-ray topography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 561
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ming, N.-B., Ge, C.-Z., J. Cryst. Growth, 99, 1309, (1990).Google Scholar
2. Verma, A.R., Crystal Growth and Dislocations, (Academic Press, New York, 1953).Google Scholar
3. Frank, F.C., Acta Cryst., 4, 497, (1951).Google Scholar
4. Tanaka, H., Uemura, Y., Inomata, J., Growth, J.Crystal, 53, 630, (1981). S. Wang, M. Dudley, C.H. Carter, Jr, V.F. Tsvetkov and C. Fazi, MRS Symp. Proc., 375, 281, (1995).Google Scholar
5. Fredrich, J. T., Menéndez, B.and Wong, T.-F., Science, 268, 276, (1995).Google Scholar
6. Spurr, A.R., J. Uitrastructure Res., 26, 31, (1969).Google Scholar
7. O'Neill, M.E. and Chorlton, F., Viscous and Compressible Fluid Dynamics, (Ellis Horwood Ltd., Chichester, England, 1989), p.82.Google Scholar
8. Cheng, P.C. and Summers, R.G., in Handbook of Biological Confocal Microscopy, p.179, edited by Pawley, J.B., (Plenum Press, New York, 1990).Google Scholar