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Characterization of Local Electrical Property of Coincidence Site Lattice Boundary in Location-controlled Silicon Islands by Scanning Probe Microscopy

Published online by Cambridge University Press:  01 February 2011

Nobuyuki Matsuki
Affiliation:
n.matsuki@tudelft.nl, Delft Institute of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands, +31 27 86294, +31 26 22163
R. Ishihara
Affiliation:
r.ishihara@tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands
A. Baiano
Affiliation:
a.baiano@ewi.tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands
Y. Hiroshima
Affiliation:
Hiroshima.Yasushi@exc.epson.co.jp, SEIKO EPSON Corporation, Frontier Device Research Center, 281 Fujimi, Fujimi-machi, Suwa-gun,, Nagano, 399-0293, Japan
S. Inoue
Affiliation:
inoue.satoshi@exc.epson.co.jp, SEIKO EPSON Corporation, Frontier Device Research Center, 281 Fujimi, Fujimi-machi, Suwa-gun,, Nagano, 399-0293, Japan
C.I.M. Beenakker
Affiliation:
neenakker@dimes.tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands
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Abstract

Local electrical property of coincidence site lattice boundaries (CSLBs) in location-controlled silicon islands, which are fabricated using micro-Czochralski process (grain filter), was characterized by scanning spreading resistance microscopy (SSRM) and scanning spreading resistance microscopy (SCM). Some CSLBs found in a silicon island are analyzed as Sigma 3 and Sigma 9 by electron back scattering diffraction pattern. These CSLBs are determined as {111}Sigma 3 and {221}Sigma 9 by referring to previous observation results made by transmission electron microscopy. {111}Sigma3 CSLBs shows no activity for SCM or SSRM; this is consistent with previous prediction that {111}Sigma 3 CSLB is not electrical active. We verified a capability of SCM and SSRM for characterizing local electrical property of coincidence site lattice boundary in silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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Characterization of Local Electrical Property of Coincidence Site Lattice Boundary in Location-controlled Silicon Islands by Scanning Probe Microscopy
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Characterization of Local Electrical Property of Coincidence Site Lattice Boundary in Location-controlled Silicon Islands by Scanning Probe Microscopy
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