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Characterization Of Hydrogen-Related Defects In Iron-Doped Indium Phosphide

Published online by Cambridge University Press:  15 February 2011

W. B. Leigh ,
D. Bliss ,
G. Bryant ,
G. Iseler ,
J. Larkin  and
J. Wolk
W. B. Leigh
Affiliation:
Division of Electrical Engineering, Saxon Drive, Alfred University, Alfred, N.Y. 14802, fleigh@bigvax.alfred.edu
D. Bliss
Affiliation:
Rome Laboratory, Hanscom AFB MA 01731
G. Bryant
Affiliation:
Rome Laboratory, Hanscom AFB MA 01731
G. Iseler
Affiliation:
Rome Laboratory, Hanscom AFB MA 01731
J. Larkin
Affiliation:
Rome Laboratory, Hanscom AFB MA 01731
J. Wolk
Affiliation:
Lawrence Berkeley Laboratory, Berkeley CA 94720.
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Abstract

We have investigated the effect of annealing on hydrogen-related donors in crystals of InP using Hall effect, infrared absorption, and photorefractive gain measurements. Hydrogen is believed to be incorporated during growth, forming a donor complex around an indium vacancy with hydrogen saturating all four dangling bonds. By observing the local vibrational mode of the hydrogen complex using infrared absorption at 2316 cm−1 was possible to observe a decrease in the concentration of the hydrogen defect after annealing. In the undoped crystal, the disappearance of this defect is accompanied by a decrease in the free carrier concentration as measured by Hall effect. These changes are correlated with a decrease in the absorption due to Fe2+ centers, which form when donors are compensated by the neutral acceptor Fe3+. The existence of the hydrogen-related donor complex is further substantiated by photorefractive experiments using 1064nm irradiation on the iron doped samples. All of the measurements point to the role of hydrogen as a contributor to the net shallow donor concentration in InP crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 447
Copyright
Copyright © Materials Research Society 1997

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