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Characterization of GaAs/Si Interface Structure by X-Ray Diffraction

Published online by Cambridge University Press:  21 February 2011

E. D. Specht
Affiliation:
Metals and Ceramics Division, Oak Ridge National Lab., Oak Ridge, TN 37831-6118
G. E. Ice
Affiliation:
Metals and Ceramics Division, Oak Ridge National Lab., Oak Ridge, TN 37831-6118
C. J. Peters
Affiliation:
Metals and Ceramics Division, Oak Ridge National Lab., Oak Ridge, TN 37831-6118
C. J. Sparks
Affiliation:
Metals and Ceramics Division, Oak Ridge National Lab., Oak Ridge, TN 37831-6118
N. Lucas
Affiliation:
Dept. of Physics and Materials Research Lab., University of Illinois, Urbana, IL 68101
X.-M. Zhu
Affiliation:
Dept. of Physics and Materials Research Lab., University of Illinois, Urbana, IL 68101
R. Moret
Affiliation:
Dept. of Physics and Materials Research Lab., University of Illinois, Urbana, IL 68101
H. Morkoc
Affiliation:
Coordinated Science Lab. and Materials Research Lab., University of Illinois, Urbana, IL 68101
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Abstract

By measuring the intensity profiles along the crystal truncation rods of a Si(001) substrate, we obtain the depth sensitivity necessary for x-ray diffraction measurements of the structure of its interface with a thick GaAs overlayer which is epitaxial to, but not in registry with the substrate. By comparing the diffraction with a model based on a grid of misfit dislocations, we find that the atoms at the interface have a root mean square displacement of 1.09±0.1Å from this ideal structure, and that the interface has a roughness of 2.9±1 Å. The diffraction indicates an anomalously small strain perpendicular to the interface in the GaAs near the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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