Skip to main content Accessibility help
×
Home
Hostname: page-component-544b6db54f-mdtzd Total loading time: 0.22 Render date: 2021-10-16T02:44:30.520Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

Published online by Cambridge University Press:  15 February 2011

L. H. Walsh
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
G. O. Ramseyer
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
J. V. Beasock
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
H. F. Helbig
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
K. P. MacWilliams
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles CA 90009–2957
Get access

Abstract

Al and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Black, J.R., Proc. 6th IEEE Symp. Reliability in Phys., p. 148 (1967).Google Scholar
2. Burkett, T.A. and Miller, R.L., 22nd IEEE Symp. Reliability in Phys., p. 273 (1984).Google Scholar
3. Dirks, A.G., Augur, R.A. and DeVeirman, A.E.M., Thin Solid Films 246, p. 164 (1994).CrossRefGoogle Scholar
4. Horstmann, E., IBM J. Res. Develop., p. 461 (1970).Google Scholar
5. Kondoh, E., Kawano, Y., Takeyasu, N., and Ohta, T., J. Electrochem. Soc. 141, p. 3,494 (1994).CrossRefGoogle Scholar
6. Harper, J.M.E., Colgan, E.G., Hu, C-K., Hummel, J.P., Buchwalter, L.P. and Uzoh, C.E., MRS Bulletin, XIX, No. 8, p. 23 (1994).CrossRefGoogle Scholar
7. Colgan, E.G. and Rodbell, K.P., J. Appl. Phys. 75, p. 3,423 (1994).CrossRefGoogle Scholar
8. Barkshire, I.R. and Prutton, M., J. Appl. Phys. 77, p. 1,082 (1995).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *