Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T04:33:33.690Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

Published online by Cambridge University Press:  15 February 2011

L. H. Walsh ,
G. O. Ramseyer ,
J. V. Beasock ,
H. F. Helbig  and
K. P. MacWilliams
L. H. Walsh
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
G. O. Ramseyer
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
J. V. Beasock
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
H. F. Helbig
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Road, Rome NY 13441–4505, walshl@rl.af.mil
K. P. MacWilliams
Affiliation:
The Aerospace Corporation, P. O. Box 92957, Los Angeles CA 90009–2957
Get access

Abstract

Al and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 663
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Black, J.R., Proc. 6th IEEE Symp. Reliability in Phys., p. 148 (1967).Google Scholar
2. Burkett, T.A. and Miller, R.L., 22nd IEEE Symp. Reliability in Phys., p. 273 (1984).Google Scholar
3. Dirks, A.G., Augur, R.A. and DeVeirman, A.E.M., Thin Solid Films 246, p. 164 (1994).Google Scholar
4. Horstmann, E., IBM J. Res. Develop., p. 461 (1970).Google Scholar
5. Kondoh, E., Kawano, Y., Takeyasu, N., and Ohta, T., J. Electrochem. Soc. 141, p. 3,494 (1994).Google Scholar
6. Harper, J.M.E., Colgan, E.G., Hu, C-K., Hummel, J.P., Buchwalter, L.P. and Uzoh, C.E., MRS Bulletin, XIX, No. 8, p. 23 (1994).Google Scholar
7. Colgan, E.G. and Rodbell, K.P., J. Appl. Phys. 75, p. 3,423 (1994).Google Scholar
8. Barkshire, I.R. and Prutton, M., J. Appl. Phys. 77, p. 1,082 (1995).Google Scholar