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Characterization of Al-Si Ohmic Contacts Obtained on Shallow Junctions by Laser and Electron Beam Annealing

Published online by Cambridge University Press:  15 February 2011

A. Armigliato ,
P. De Luca ,
M. Finetti  and
S. Solmi
A. Armigliato
Affiliation:
CNR-Istituto Lamel, Via Castagnoli, 1 – 40126 Bologna, Italy
P. De Luca
Affiliation:
CNR-Istituto Lamel, Via Castagnoli, 1 – 40126 Bologna, Italy
M. Finetti
Affiliation:
CNR-Istituto Lamel, Via Castagnoli, 1 – 40126 Bologna, Italy
S. Solmi
Affiliation:
CNR-Istituto Lamel, Via Castagnoli, 1 – 40126 Bologna, Italy
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Abstract

In this work the capability of pulsed ruby laser and multiscan electron beam techniques in the formation of Al-Si ohmic contacts on shallow (0.3 μm) junctions has been investigated. To measure the contact resistivity, properly designed test patterns have been employed, whereas to evaluate the junction leakage induced by the Al-Si interaction during sintering, the diode reverse current has been tested.

Laser beam annealing gives rise to scattered values of contact resistivity, ranging from 10-4 to 5 × 10-3 ohm-cm2 without any clear dependence on the energy used. The corresponding diode reverse currents were higher than those of the unannealed specimens by about three orders of magnitude.

E-beam annealing achieves contact resistivities on the order of 10-5 ohm-cm2 typical of conventional thermal treatment, with a parallel increase in the reverse current by only one order of magnitude.

These results indicate electron-beam annealing as a promising technique in the realization of Al-Si ohmic contacts for VLSI technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 329
Copyright
Copyright © Materials Research Society 1981

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References

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