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Characterization of a Metastable Defect Introduced In Epitaxially Grown Boron Doped Si by 5.4 Mev α-Particles

Published online by Cambridge University Press:  10 February 2011

M. Mamor ,
F.D. Auret ,
S.A. Goodman  and
W.E. Meyer
M. Mamor
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, South Africa, mmamor@scientia.up.ac.za
F.D. Auret
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, South Africa, fauret@scientia.up.ac.za
S.A. Goodman
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, South Africa
W.E. Meyer
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, South Africa
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Abstract

Deep level transient spectroscopy (DLTS) was used to examine the metastability of a defect configuration in epitaxially grown boron-doped p-type Si. We report the detection of a new metastable defect Hα2 in p-Si following room temperature alpha particle irradiation. DLTS measurements coupled with bias-on/bias-off cooling cycles were used to study the annealing and introduction kinetics of this metastable defect. After removing Hα2 by zero-bias annealing at room temperature, it was re-introduced by reverse bias annealing in the 240-265 K temperature range under predominantly first order kinetics. The energy level and apparent capture cross section, as determined by DLTS, were E,+ 0.43 eV and 1.4 × 10−15 cm2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 449
Copyright
Copyright © Materials Research Society 1998

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