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Characteristic Temperature Estimation for GaN-Based Lasers

Published online by Cambridge University Press:  15 February 2011

T. Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan, e-mail: ctl1761@ns.kogakuin.ac.jp TEL:+81-426-22-9291 ext. 3440 FAX: +81-426-25-8982
H. Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan, e-mail: ctl1761@ns.kogakuin.ac.jp TEL:+81-426-22-9291 ext. 3440 FAX: +81-426-25-8982
T. Sakaguchi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan, e-mail: ctl1761@ns.kogakuin.ac.jp TEL:+81-426-22-9291 ext. 3440 FAX: +81-426-25-8982
F. Koyama
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
K. Iga
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Corresponding
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Abstract

We have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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