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The Characterisation of Laser and Electron Beam Annealed Silicon by Infrared Spectrophotometry

Published online by Cambridge University Press:  15 February 2011

Marek Pawlik
Marek Pawlik*
Affiliation:
The General Electric Company Limited, Hirst Research Centre, Wembley, Middlesex, England
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Abstract

An exact model of the IR reflectance and transmission spectra of inhomogeneously doped silicon has been developed. By comparing theoretically and experimentally generated spectra in the range 1.2 to 25 μm, information about the doping profile may be deduced. The technique has been applied to laser and electron beam annealed silicon (as well as furnace annealed) and comparisons made with theoretical profiles and SIMS analysis in the latter case. No values consistent with other published data have been found for the optical properties of silicon at high doping levels (>1020 cm−3).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 293
Copyright
Copyright © Materials Research Society 1982

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References

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