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Catalyzed Gaseous Etching of Silicon

Published online by Cambridge University Press:  28 February 2011

N. Selamoglu ,
J. A. Mucha ,
D. L. Flamm  and
D. E. Ibbotson
N. Selamoglu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. A. Mucha
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. L. Flamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. E. Ibbotson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Etching of silicon by molecular fluorine is accelerated when trace quantities of copper are present on the surface. Copper is a residue formed when sputter-deposited aluminum (containing 0.5 % copper) is selectively removed by HF from the silicon surface. The temperature dependence of the etching rate was studied in the range 60–290°C. At temperatures higher than 80°C copper causes a ˜100-fold increase in the rate of etching of the underlying silicon (100), compared to unmetallized samples. Above 180°C, F2 exhibits a higher absolute etch rate than equivalent concentrations of fluorine atoms. Preliminary results for other metal contaminants and etchant gases indicate that silver also accelerates F2 etching, and copper enhances etching by NF3. The results are interpreted in terms of a catalytic mechanism.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 459
Copyright
Copyright © Materials Research Society 1987

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