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Carbonization Dynamics of Silicon Surfaces By Hydrocarbon Gas Molecular Beams

Published online by Cambridge University Press:  22 February 2011

Tatsuo Yoshinobu
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606–01, Japan
Takashi Fuyuki
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606–01, Japan
Hiroyuki Matsunami
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606–01, Japan
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Abstract

Carbonization dynamics of Si surfaces using a hydrocarbon gas molecular beam was investigated. In case of carbonizing atomically clean Si surfaces with C2H2, single crystalline 3C-SiC layers were obtained only In the narrow range of a substrate temperature near 780 °C. Control of surface reaction by a cap of very thin surface oxide layer and gradual increase of substrate temperature during carbonization were found to be effective in forming single crystalline 3C-SiC layers reproducibly.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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[8] Yoshinobu, T., Fuyuki, T. and Matsunami, H.: Jpn. J. Appl. Phys. to be published.Google Scholar

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