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Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

Published online by Cambridge University Press:  03 September 2012

N. Tsubouchi
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
Y. Horino
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
B. Enders
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
A. Chayahara
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
A. Kinomura
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
K. Fujii
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
Corresponding
E-mail address:
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Abstract

Using a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2 -, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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