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Bond-Angle Variation and Microstructure in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

A. J. M. Berntsen
Affiliation:
Dept. of Atomic & Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
M. J. Van Den Boogaard
Affiliation:
Dept. of Atomic & Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
W. G. J. H. M. Van Sark
Affiliation:
Dept. of Atomic & Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
W. F. Van Der Weg
Affiliation:
Dept. of Atomic & Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands.
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Abstract

A series of hydrogenated amorphous silicon (a-Si:H) films was deposited by rf glow-discharge deposition using various processing conditions. We have studied microstructure in the films by means of infrared absorption spectroscopy. Small-angle X-ray scattering measurements were used to determine the microvoid fractions of a few selected samples. Our results show that both the void fraction and the amount of microstructure can be varied either by changing the substrate temperature or by H2 dilution. Bond-angle variation in the films was probed by Raman scattering measurements. The Raman data indicate that the substrate temperature is the main variable that determines the bond-angle variation. We conclude that the presence of microvoids in a-Si:H does not influence the structural disorder of the amorphous matrix surrounding the voids. Our results are in agreement with experimental work on microvoids in a-Si1-xCx:H, and model calculations on voids in a-Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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