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Barrier Limited Transport Mechanisms in Doped μc-Si and μc-Si,C

Published online by Cambridge University Press:  21 February 2011

G. Lucovsky  and
C. Wang
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695–8202
C. Wang
Affiliation:
Departments of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695–8202
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Abstract

An analysis of the room-temperature dark conductivities and activation energies for doped μc-Si and μc-Si,C is used to develop a band alignment model which shows that the maximum attainable dark conductivities in these materials are determined by transport through, or over interfacial potential barriers between Si crystallites, c-Si, and the intervening amorphous regions: a-Si:H or a-Si,C:H, respectively. For all levels of doping in μc-Si,C, the transport is limited by thermionic emission over interfacial barriers at the c-Si/a-Si,C:H interface, placing a significant constraint on applications requiring both high optical transparency and high conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 377
Copyright
Copyright © Materials Research Society 1991

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References

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