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Back-To-Back Amorphous Silicon Diodes For Driving Lc Displays

Published online by Cambridge University Press:  28 February 2011

Joseph Dresner
Joseph Dresner*
Affiliation:
RCA Laboratories, Princeton, NJ 08540
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Abstract

This paper describes the preparation and electrical characteristics of a-Si:H p-i-n-i-p and n-i-p-i-n thin film diodes suitable for driving monochrome liquid crystal displays with more than 500 lines. The symmetrical current-voltage curves in the reverse breakdown regime can ge described by i=i exp (E/Eo) where E ≃9×104 V/cm. In the range 20–125°C, the current is thermally activated with an energy of 0.25eV. The response time to applied voltage pulses is ≤ 10 us. The stability of the electrical characteristics is adequate for at least 104 hours of operation in an liquid crystal display.

Electrical characteristics indicate that the reverse breakdown current is a tunneling current injected into the i-layer and that electrons are likely to be dominant.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 663
Copyright
Copyright © Materials Research Society 1986

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References

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