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Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
Published online by Cambridge University Press: 10 February 2011
Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 53
- Copyright © Materials Research Society 1998