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Atomic Structure of HgTe and CdTe Epitaxial Layers Grown by MBE on GaAs Substrates

Published online by Cambridge University Press:  25 February 2011

F. A. Ponce ,
G. B. Anderson  and
J. M. Ballingall
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
J. M. Ballingall
Affiliation:
McDonnel Douglas Research Laboratories, St. Louis, Missouri 63166
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Abstract

Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 199
Copyright
Copyright © Materials Research Society 1987

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