Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-12-03T16:01:16.308Z Has data issue: false hasContentIssue false

Atomic Scale Characterization of (NH4)2Sx-Treated GaAs (100) Surface

Published online by Cambridge University Press:  21 February 2011

Naoki Yokoi
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Hiroya Andoh
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Mikio Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Get access

Abstract

The geometric structure of GaAs (100) surfaces, treated in a (NH4)2Sx solution and annealed in N2 environment, has been studied in an atomic scale using high-resolution Rutherford backscattering (RBS), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). RBS analysis using medium energy ion scattering (MEIS) could provide the thickness of the sulfur layer on the GaAs surface of about 1.5 monolayers. RBS channeling spectra indicated that the disorder of atoms in the surface region of S-terminated samples was smaller than that of untreated one. XPS spectra showed that S atoms on the surface bonded only As atoms. STM observation revealed that S atoms had a periodicity of 4 Å corresponding to that of Ga or As atoms in the (100) plane.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ohno, T., Surf. Sci. 255, 229 (1991).Google Scholar
2. Ohno, T. and Shiraishi, K., Phys. Rev. B42, 11194 (1990).Google Scholar
3. Fan, J. -F., Oigawa, H. and Nannichi, Y., Jpn. J. Appl. Phys. 27, L1331 (1988); J. -F. Fan,, Y. Kurata and Y. Nannichi, Jpn. J. Appl. Phys. 27, L2255 (1989).Google Scholar
4. Shigekawa, H., Hasizume, T., Oigawa, H., Motai, K., Mera, Y., Nannichi, Y. and Sakurai, T., Appl. Phys. Lett. 59, 2986 (1991).Google Scholar
5. Richter, R. and Hartnagel, L., J. Electrochem. Soc. 137, 2879 (1990).Google Scholar
6. Kinomura, A., Takai, M., Namba, S. and Agawa, Y., Nucl. Instrum. Methods B64, 576 (1992).Google Scholar
7. Yokoi, N., Ueda, S., Namba, S. and Takai, M., Jpn. J. Appl. Phys. 32, L129 (1993).CrossRefGoogle Scholar
8. Yokoi, N., Namba, S. and Takai, M., Advanced Materials for Optics and Electronics 2, 71 (1993).Google Scholar
9. Eds Briggs, D. and Seah, M. P., Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy (John Wiley & Sons, Chichester, 1983).Google Scholar
10. Nannich, Y. and Oigawa, H., Ext. Abst. 22nd Conf. SSDM, 453 (1990).Google Scholar