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Atomic Registry at the Pt-Si Interface Studied by Transmission Channeling RBS

Published online by Cambridge University Press:  26 February 2011

John R. Abelson  and
Thomas W. Sigmon
John R. Abelson
Affiliation:
Stanford Electronics Labs, Stanford CA. 94305
Thomas W. Sigmon
Affiliation:
Stanford Electronics Labs, Stanford CA. 94305
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Abstract

Transmission channeling Rutherford scattering of MeV ions is one of the only techniques which can probe the atomic registry at a “buried” internal interface between a thin film and single-crystal substrate. Interfacial intermixing, dislocations, and reconstruction can be observed at concentrations above ∼ 3×1015 atoms/cm. The physical basis for this measurement is the “flux-peaking” effect, which is well known in conventional ion channeling as a method to determine the lattice location of dilute impurities. Transmission channeling is conceptually similar, but the scattering arises from the interface at the exit side of a thin single crystal sample rather than from a volume effect.

In this work, we apply transmission channeling to measure the low temperature intermixing between Pt and Si. In a previous study, we suggested that a disordered interface forms prior to crystalline suicide formation. The present results are a quantitative measurement of the area density of Si which intermixes with Pt at 150°C. Experiments are performed using 80A Pt layers e-béam deposited onto 1–2μm thick single crystals of Si(100) and (111) following various interfacial cleaning procedures. We find that >1×1016 Si atoms/cm2 are displaced from their lattice sites after Pt deposition, increasing to ∼2×1016/cm2 upon annealing to 150°C. The room temperature intermixing of >6 monolayers of Si is large, but not inconsistent with existing studies of the Pt - Si reaction. The transmission channeling measurement includes any Si segregated at grain boundaries or the free surface as well as the interface. No systematic differences are observed as a function of substrate orientation or cleaning procedure.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 283
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Nemanich, R. J., Stafford, B. L., Abelson, J. R., and Sigmon, T. W., Proceedings of the International Conference on the Physics of Semiconductors, (Springer-Verlag, New York 1984), 155–8.Google Scholar
2. van der Veen, J. F. and van Loenen, E. J., Surface Science 168, 701–712 (1986).Google Scholar
3. Hiraki, A., Surface Science Reports 3, 357–412 (1985).CrossRefGoogle Scholar
4. Hanbücken, M. and IeLay, G., Surface Science 168, 122–32 (1986).Google Scholar
5. Nemanich, R. J. et al., Materials Research Society Symposia Proceedings 25, (9), 9 (1984).Google Scholar
6. Abelson, J. R. and Sigmon, T. W., in Materials Characterization, edited by Cheung, N. W. and Nicolet, M.A. (Volume 69 of the Materials Research Society Symposia Proceedings, Pittsburgh, PA. 1986), 275.Google Scholar
7. Feldman, L.C., Mayer, J. W. and Picraux, S. T., Materials Analysis by Ion Channeling, (Academic Press, New York 1982).Google Scholar
8. van Vliet, D., Radiation Effects 10, 137–155 (1971).CrossRefGoogle Scholar
9. Channeling, ed. by Morgan, D. V., (John Wiley & Sons, New York 1973), 142.Google Scholar
10. Cheung, N. W. et al., Phys. Rev. Lett. 45 (2), 120–4 (1980).CrossRefGoogle Scholar
11. Cheung, N. W., Feldman, L. C., Silverman, P. J., and Stensgaard, I., Applied Physics Letters 35 (11), 859–861 (1979).Google Scholar
12. Ito, H. S. and Gibson, W. M., J. Vac. Sci and Tech. A3 (3), 942–5 (1985).Google Scholar
13. Tabe, M., Appl. Phys. Lett. 45 (10), 1073–1075 (1984).Google Scholar
14. Crider, C. A. et al., J. Appl. Phys. 52 (4), 2860–2868 (1981).Google Scholar
15. Abelson, J. R. and Sigmon, T. W., Proceedings of the TMS Meeting (Murray Hill, N. J., 1986).Google Scholar
16. Ishizaka, A. and Shiraki, Y., JECS: El.-Ch. Sci. and Tech. 133 (4), 666–671 (1986).Google Scholar
17. Chu, W. K., Mayer, J. W. and Nicolet, M.-A., Backscattering Spectrometry, (Academic Press, New York, 1978), Ch. 6 and 8.Google Scholar
18. Eisen, F. H. and Bøttiger, J., Applied Physics Letters 24 (1), 3–5 (1974).CrossRefGoogle Scholar
19. Tsang, J. C., Matz, R., Yokoda, Y., and Rubloff, G. W., J. Vac. Sci. and Tech. A2 (2), 556–60 (1984).Google Scholar
20. Kawarada, H., Ohdomari, I., and Horiuchi, S., Materials Research Society Symposia Proceedings 25, (9), 429–34 (1984).CrossRefGoogle Scholar
21. Yokota, Y., Matz, R., and Ho, P. S., Materials Research Society Symposia Proceedings 25 (9), 435–40 (1984).CrossRefGoogle Scholar
22. Matz, R. et al., J. Vac. Sci. and Tech. A2 (2), 253–258 (1984).Google Scholar