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The a-Si:H Growth Mechanism: Temperature Study of the SiH3 Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth

Published online by Cambridge University Press:  01 February 2011

W.M.M. Kessels ,
Y. Barrell ,
P.J. van den Oever ,
J.P.M. Hoefnagels  and
M.C.M. van de Sanden
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Y. Barrell
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
P.J. van den Oever
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J.P.M. Hoefnagels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been investigated by spectroscopic means as a function of the substrate temperature (50 - 450°C) using the time-resolved cavity ringdown technique. The silicon hydrides –SiHx on the a-Si:H surface during deposition have been studied by the combination of in situ attenuated total reflection infrared spectroscopy and argon ion-induced desorption of surface hydrogen. For SiH3 dominated plasma conditions, it is found that the surface reactivity of SiH3 is independent of the substrate temperature with β = 0.30±0.03 whereas the silicon hydride composition on the a-Si:H surface changes drastically for increasing substrate temperature (from –SiH3 to =SiH2 to ≡SiH). The implications of these observations for the a-Si:H growth mechanism are addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A9.3
Copyright
Copyright © Materials Research Society 2003

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References

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