Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-21T13:02:40.866Z Has data issue: false hasContentIssue false
  • English
  • Français

Arsenic Diffusion in Intrinsic Gallium Arsenide

Published online by Cambridge University Press:  10 February 2011

G. Bösker ,
N.A. Stolwijk ,
H. Mehrer ,
U. Södervall ,
J.V. Thordson ,
T.G. Anderson  and
A. Burchard
G. Bösker
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, bosker@uni-muenster.de
N.A. Stolwijk
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany
H. Mehrer
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany
U. Södervall
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
J.V. Thordson
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
T.G. Anderson
Affiliation:
Chalmers University of Technology, Department of Physics, S-41296 Göteborg, Sweden
A. Burchard
Affiliation:
ISOLDE Collaboration, CERN, CH-1211 Geneva 23, Switzerland
Get access

Abstract

Self-diffusion on the As sublattice in intrinsic GaAs was investigated in a direct way by As tracer diffusion measurements using the radioisotopes 73As and 76As and in an indirect way by annealing of buried nitrogen doping layers in epitaxially grown GaAs/GaAs:N heterostructures. The latter experiments were analyzed by secondary ion mass spectroscopy and interpreted within the framework of the kick-out mechanism yielding the As diffusivities mediated by As interstitials IAs. Comparison of with tracer diffusion coefficients – including data reported in the literature–points to a substantial contribution of IAs to As diffusion in intrinsic GaAs under As-rich ambient conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 347
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Palfrey, H.D., Brown, M., and Willoughby, A.F.W., J. Electrochem. Soc.: Solid State Science and Technology 128 (10), 2224 (1981).Google Scholar
[2] Wang, L., Hsu, L., Haller, E.E., Erickson, J.W., Fischer, A., Eberl, K., and Cardona, M., Phys. Rev. Lett. 76 2342 (1996).Google Scholar
[3] Yu, S., Tan, T.Y., and Gösele, U., J. Appl. Phys. 69 (6), 3547 (1991).Google Scholar
[4] Muraki, K. and Horikoshi, Y., Inst. Phys. Conf. Ser. No 145: Chapter 3 547 (1996).Google Scholar
[5] Tan, T.Y., Gosele, U. and Yu, S., Mat. Sci. Eng. 17 47 (1991).Google Scholar
[6] Bösker, G., Stolwijk, N.A., Hettwer, H.-G., Rucki, A., Jäger, W., and Södervall, U., Phys. Rev. B 52, 11 927 (1995).Google Scholar
[7] Baraff, G.A. and Schliiter, M., Phys. Rev. Lett. 55 1327 (1985).Google Scholar
[8] Goldstein, B., Phys. Rev. 121 1305 (1960).Google Scholar
[9] Palfrey, H.D., Brown, M., and Willoughby, A.F.W., J. Electro. Mater. 12 863 (1983).Google Scholar
[10] Wenwer, F., Gude, A., Rummel, G., Eggersmann, M., Zumkley, Th., Stolwijk, N. A., and Mehrer, H.: Meas. Sci. Technol. 7, 632–640 (1996)Google Scholar
[11] Thordson, J.V., Zsebök, O., Södervall, U., Andersson, T.G., MRS Internet J. Of Nitride Semiconductor Research, Vol 2, Article 8 (1997).Google Scholar
[12] Routbort, J.L. and Rothmann, S.J., Diffusion and Defect Data, Vol 40, pp. 1–12, 1985.Google Scholar
[13] Tuck, B. and Powell, R.G., J. Phys. D: Appl. Phys., 14 1317–24, (1981).Google Scholar
[14] Young, A.B.Y. and Pearson, G.L., J. Phys. Chem. Solids Pergamon Press 1970, Vol. 31, pp.517–527, (1970).Google Scholar
[15] Jüngling, W., Pilcher, P., Selbstherr, S.. Guerrero, E. and Plötzel, H.W., IEEE Trans. Electron Devices ED–32, 156 (1985).Google Scholar
[16] Moriya, N., Brener, I., Kalish, R., Pfeiffer, W., Deicher, M., Keller, R., Magerle, R., Recknagel, E., Skudlik, H., Wichert, Th., Wolf, H. and ISOLDE collaboration, J. Appl. Phys. 73 (9), 4248 (1993).Google Scholar
[17] Uematsu, M., Werner, P., Schultz, M., Tan, T.Y. and Gbsele, U., Appl. Phys. Lett. 67 (19), 2863–2865 (1995).Google Scholar
[18] Bösker, G., Stolwijk, N.A., Thordson, J.V., Södervall, U. and Andersson, T.G., in preparationGoogle Scholar
[19] Philibert, J., Atom Movements–Diffusion and Mass Transport in Solids, Les Ulis: Les Editions de Physique 1991.Google Scholar