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Application of Two-Step Deposition Method To Ultra-Thin a-Si FETs

Published online by Cambridge University Press:  28 February 2011

Y. Katoh ,
O. Sugiura ,
Y. Takeuchi ,
Y. Uchida  and
M. Matsumura
Y. Katoh
Affiliation:
Department of Electrical and Electronic EngineeringTokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
O. Sugiura
Affiliation:
Department of Electrical and Electronic EngineeringTokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
Y. Takeuchi
Affiliation:
Department of Electrical and Electronic EngineeringTokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
Y. Uchida
Affiliation:
Department of Electrical and Electronic EngineeringTokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
M. Matsumura
Affiliation:
Department of Electrical and Electronic EngineeringTokyo Institute of Technology, Meguro-ku, Tokyo 152, JAPAN
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Abstract

Two-step deposition method for fabricating ultra-thin a-Si FETs has been investigated theoretically and experimentally. Theoretical relation between field-effect mobility and a-Si layer thickness agreed qualitatively with the experimental results. The mobility of the 15nm-thick FET was drastically improved by an application of the two-step deposition method.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 657
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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