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Annealing of Nanocrystalline Silicon Micro-bridges with Electrical Stress

Published online by Cambridge University Press:  01 February 2011

Gokhan Bakan ,
Adam Cywar ,
Cicek Boztug ,
Mustafa Bilal Akbulut ,
Helena Silva  and
Ali Gokirmak
Gokhan Bakan
Affiliation:
gob07002@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Adam Cywar
Affiliation:
adam.cywar@gmail.com, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Cicek Boztug
Affiliation:
cicek@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Mustafa Bilal Akbulut
Affiliation:
mustafa@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Helena Silva
Affiliation:
silva@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Ali Gokirmak
Affiliation:
gokirmak@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
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Abstract

Nanocrystalline silicon (nc-Si) micro-bridges are melted and crystallized through Joule heating by applying high-amplitude short duration voltage pulses. Full crystallization of nc-Si bridges is achieved by adjusting the voltage-pulse amplitude and duration. If the applied pulse cannot deliver enough energy to the bridges, only surface texture modification is observed. On the contrary, if the pulse is not terminated after the entire bridge melts, molten silicon diffuses on to the contact pads and the bridge tapers in the middle. Melting of the bridges can be monitored through current-time (I-t) and voltage-time (V-t) measurements during the electrical stress. Conductance of the bridges is enhanced after the electrical stress.

Keywords

crystal growthSithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL03-25
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Reuss, R. H., Chalama, B. R., Moussessian, A., Kane, M. G., Kumar, A., Zhang, D. C., Rogers, J. A., Hatalis, M., Temple, D., Moddel, G., Eliasson, B. J., Estes, M. J., Kunze, J., Handy, E. S., Harmon, E. S., Salzman, D. B., Woodall, J. M., Alam, M. A., Murthy, J. Y., Jacobsen, S. C., Olivier, M., Markus, D., Campbell, P. M. and Snow, E., “Macroelectronics: Perspectives on technology and applications,” Proc IEEE, vol. 93, pp. 1239–1256, 2005.Google Scholar
[2] Wagner, S., Gleskova, H., Cheng, I. C. and Wu, M., “Silicon for thin-film transistors,” Thin Solid Films, vol. 430, pp. 15–19, 2003.Google Scholar
[3] McAlpine, M. C., Friedman, R. S. and Lieber, C. M., “High-Performance Nanowire Electronics and Photonics and Nanoscale Patterning on Flexible Plastic Substrates,” Proceedings of the IEEE, Jul, vol. 93, pp. 1357–1363, 2005.Google Scholar
[4] Kamins, T. I., Polycrystalline Silicon for Integrated Circuits and Displays. Kluwer Academic Publishers, 1998.Google Scholar
[5] Boztug, C., Bakan, G., Akbulut, M., Henry, N., Gokirmak, A. and Silva, H., “Numerical modeling of electrothermal effects in silicon nanowires,” in Mater, Res, Soc, Symp, Proc, vol. 1083, pp. R04–11, 2008.Google Scholar
[6] The Cornell NanoScale Science & Technology Facility, www.cnf.cornell.edu. Google Scholar
[7] Raman, M., Kifle, T., Bhattacharya, E. and Bhat, K., “Physical Model for the Resistivity and Temperature Coefficient of Resistivity in Heavily Doped Polysilicon,” Electron Devices, IEEE Transactions on, vol. 53, pp. 1885–1892, 2006.Google Scholar
[8] Henry, N., “Crystallization of amorphous silicon nanowires using electromigration and self-heating for TFT applications “NNIN REU 2006 Research Accomplishments.Google Scholar