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Anisotropy of the Porous Silicon Photoluminescence
Published online by Cambridge University Press: 15 February 2011
Abstract
Polarization memory effect in the porous Si photoluminescence is studied. The anisotropy of the linear polarization degree is found in the samples etched with polarized light-assistance. The effect is explained by the anisotropie in plane distribution of the elongated Si crystallites. Under resonant optical excitation four-fold anisotropy of the photoluminescence polarization, linked to the crystalline axes of the bulk Si substrate, is observed.
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- Copyright © Materials Research Society 1997
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