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Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

Jože Furlan  and
Slavko Amon
Jože Furlan
Affiliation:
University of Ljubljana, Fak. za elektro., Tržaška 25, Ljubljana, Yugoslavia
Slavko Amon
Affiliation:
University of Ljubljana, Fak. za elektro., Tržaška 25, Ljubljana, Yugoslavia
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Abstract

A general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 149
Copyright
Copyright © Materials Research Society 1986

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References

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