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Analysis of Radical Reaction on Growing Surface During Si Epitaxy by Photo-Cvd

Published online by Cambridge University Press:  10 February 2011

Katsuya Abe ,
Tatsuro Watahiki ,
Akira Yamada  and
Makoto Konagai
Katsuya Abe
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Tatsuro Watahiki
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Akira Yamada
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Makoto Konagai
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Abstract

The growth mechanism of Si film at low temperature on Si(100) by photo-CVD was theoretically analyzed by using reaction models both in the gas phase and on the growing surface. We introduced three surface reactions; the growth of Si from SiH3 radicals, the dangling bond termination by atomic hydrogen and the abstraction of bonding hydrogen by SiH3 radicals. We assumed that the film structure is determined by the hydrogen surface coverage ratio “ø” and the parameters of the surface reaction model were determined from the experimental results. The theoretical analysis explained well the experimental data on the growth rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 423
Copyright
Copyright © Materials Research Society 1998

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References

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