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An MBE and Modeling Study of Pulsed Growth on Ge(001)

Published online by Cambridge University Press:  11 February 2011

M. A. Gallivan  and
H. A. Atwater
M. A. Gallivan
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology Pasadena, CA 91125
H. A. Atwater
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology Pasadena, CA 91125
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Abstract

Ge molecular beam epitaxy (MBE) and kinetic Monte Carlo (KMC) simulations are used to study time-varying processing parameters and their effect on surface morphology. We focus here on Ge growth on highly-oriented Ge(001) substrates with reflection high-energy electron diffraction (RHEED) as a real-time sensor. KMC simulations are used as the physical model, and physical parameters are determined from growth under pulsed flux. A reduced version of the simulations is generated, and temperature trajectories are computed that minimize surface roughness subject to experimental constraints.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W16.10
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Bortz, A. B., Kalos, M. H., and Lebowitz, J. L.. A new algorithm for Monte Carlo simulations of Ising spin systems. Journal of Computational Physics, 17: 10–18, 1975.Google Scholar
[2] Gallivan, M. A.. Modeling and Control of Epitaxial Thin Film Growth. PhD thesis, California Institute of Technology, Pasadena, CA 91125, September 2002. http://etd.caltech.edu/etd/available/etd-10222002-115711/.Google Scholar
[3] Gilmer, G. H. and Bennema, P.. Simulation of crystal growth with surface diffusion. Journal of Applied Physics, 43: 1347–1360, 1972.Google Scholar
[4] Markov, V. A., Pchelyakov, O. P., Sokolov, L. V., Stenin, S. I., and Stoyanov, S.. Molecular beam epitaxy with synchronization of nucleation. Surface Science, 250: 229–234, 1991.Google Scholar
[5] Van Nostrand, J. E., Chey, S. J., and Cahill, D. G.. Low temperature growth morphology of singular and vicinal Ge(001). Physical Review B, 57(19): 12536–12543, 1998.Google Scholar
[6] Taylor, M. E. and Atwater, H. A.. Monte Carlo simulations of epitaxial growth: comparison of pulsed laser deposition and molecular beam epitaxy. Applied Surface Science, 129: 159–163, 1998.Google Scholar