Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-21T23:18:21.366Z Has data issue: false hasContentIssue false

Amorphous Silicon Thin Film Transistors Produced by Atmospheric Pressure CVD

Published online by Cambridge University Press:  22 February 2011

Byung Chul Ann
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Jeong Hyun Kim
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Chan Hee Hong
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Woo Yeol Kim
Affiliation:
Anyang Research Lab., GoldStar Co., Anyang-shi, Korea
Kwang Nam Kim
Affiliation:
Dept. of Physics, Kyung Hee University, Seoul 130–701, Korea
Hee Kyung Kang
Affiliation:
Dept. of Physics, Kyung Hee University, Seoul 130–701, Korea
Jin Jang
Affiliation:
Dept. of Physics, Kyung Hee University, Seoul 130–701, Korea
Get access

Abstract

We have studied the preparation and device application of a-Si by atmospheric pressure CVD using disilane. The deposition rate of a-Si increases with the partial pressure of disilane and with the total pressure. The deposition rate of APCVD a-Si is, therefore, very high compared with LPCVD. The photosensitivity of APCVD a-Si is 104 at 100mW/cm2. We have made an inverse staggered type a-Si TFT using SiO2 as a gate insulator. The on/off current ratio and field effect mobility are 105 and 0.19cm2/Vs, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Adams, A. C.. VLSI Technology, edited by Sze, S.M. (McGrow-Hill, New York, 1983), p. 125.Google Scholar
2. Kanoh, H., Sugiura, O., Breddels, P.A. and Matsumura, M., IEEE Electron Devices Lett. 11, 258 (1990).Google Scholar
3. Breddels, P.A., Kanoh, H., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 30, 233 (1991).Google Scholar
4. Ahn, B.C., Shimizu, K., Satoh, T., Kanoh, H., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 30, 3695 (1991).Google Scholar
5. Ellis, F.B. Jr, and Gordon, R.G., J. Appl. Phys. 54, 5381 (1983).Google Scholar
6. Chu, T.L., Chu, S.S., Ang, S.T., Duong, A., Han, Y.X., and Liu, Y.H., J. Appl. Phys. 60 4286 (1986).Google Scholar